NTLJF3118N
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Maximum Instantaneous
Symbol
V F
Test Conditions
I F = 0.1 A
Min
Typ
0.26
Max
0.35
Unit
V
Forward Voltage
I F = 1.0 A
I F = 2.0 A
0.35
0.41
0.42
0.52
Maximum Instantaneous
Reverse Current
I R
V R = 20 V
V R = 10 V
0.20
0.045
5.0
1.0
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 85 ° C unless otherwise noted)
Parameter
Maximum Instantaneous
Symbol
V F
Test Conditions
I F = 0.1 A
Min
Typ
0.18
Max
Unit
V
Forward Voltage
I F = 1.0 A
I F = 2.0 A
0.29
0.36
Maximum Instantaneous
Reverse Current
I R
V R = 20 V
V R = 10 V
4.9
1.6
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 125 ° C unless otherwise noted)
Parameter
Maximum Instantaneous
Symbol
V F
Test Conditions
I F = 0.1 A
Min
Typ
0.13
Max
Unit
V
Forward Voltage
I F = 1.0 A
I F = 2.0 A
0.25
0.33
Maximum Instantaneous
Reverse Current
I R
V R = 20 V
V R = 10 V
42
13
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Capacitance
Parameter
Symbol
C
Test Conditions
V R = 5.0 V, f = 1.0 MHz
Min
Typ
52.3
Max
Unit
pF
ORDERING INFORMATION
Device
NTLJF3118NTAG
NTLJF3118NTBG
Package
WDFN6
(Pb-Free)
WDFN6
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
(Pb-Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
相关PDF资料
NTLJF4156NT1G MOSFET N-CH 30V 2.5A 6-WDFN
NTLJS1102PTBG MOSFET P-CH 8V 3.7A 6-WDFN
NTLJS2103PTAG MOSFET P-CH 12V 3.5A 6-WDFN
NTLJS3113PTAG MOSFET P-CH 20V 3.5A 6-WDFN
NTLJS3180PZTBG MOSFET P-CH 20V 3.5A 6-WDFN
NTLJS4114NT1G MOSFET N-CH 30V 3.6A 6-WDFN
NTLJS4149PTBG MOSFET P-CH 30V 4.6A SGL 6WDFN
NTLJS4159NT1G MOSFET N-CH 30V 3.6A 6-WFDN
相关代理商/技术参数
NTLJF4156N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices
NTLJF4156NT1G 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJF4156NTAG 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJS1102P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package
NTLJS1102PTAG 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJS1102PTBG 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJS2103P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET
NTLJS2103PTAG 功能描述:MOSFET PFET WDFN6 12V 5.9A 0.025 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube